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In Stock (more than 50 pcs)
|Flash type||Synchronous MLC NAND Flash|
|Read/Write Performance||Sequential Read||Up to 550MB/s|
|Sequential Write||Up to 450MB/s|
|4KB Sequential Read IOPS||74212|
|4KB Sequential Write IOPS||68870|
|4KB Random Read IOPS||74764|
|4KB Random Write IOPS||1555|
|Power Consumption||Power Supply||5V+5%|
|4KB Random Write||2W|
|Reliability||Write endurance: 8 years @ 100G write/day(32G)|
|Read endurance: unlimited|
|MTBF: >2,000,000 hours|
|Data retention: >20years @ 25°C|
|Data destroy do not support|
|Sudden power-off recovery support|
|S.M.A.R.T,NCQ,Trim and dynamic power management support|
|Static and dynamic wear-leveling|
|Bad block management algorithm|
|ECC: Supports BCH ECC 16 / 24 / 40 bits in 1024 bytes|
|Environment||Storage temperature: -55~95 °C|
|Operation temperature: 0-70°C|
|Vibration: 20G Peak, 10 ~ 2000Hz, (15mins/ Axis) x3 Axis|
|Shock: 1500G (@0.5ms half sine wave)|
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